Samsung starts production of first generation 3nm chips

Samsung Foundry has announced that it is starting mass production of its first generation chips on a 3nm node. It is based on the new GAA (Gate-All-Around) transistor architecture, which is the next step after FinFET.

Compared to Samsung’s first-generation 3nm 5nm chips, they can deliver up to 23% better performance, up to 45% lower power consumption and 16% less space.

Samsung’s second-generation 3nm node will be even more impressive – compared to Samsung’s 5nm, it promotes a 50% reduction in power consumption, up to a 30% improvement in performance and a 35% reduction in space.

Samsung is now ahead of TSMC, which is expected to begin mass production of 3nm chips the second half of the year.

The design of Gate-All-Around (GAA) transistors allows the foundry to downsize transistors without compromising their current carrying ability. The GAAFET design used in the 3nm node is the MBCFET variant shown in the figure below.

Development of silicon transistors
Development of silicon transistors


Source link

Leave a Reply

Your email address will not be published.